Method and Apparatus for Manufacturing Protective Layer

ABSTRACT

An apparatus for manufacturing a protective layer includes a film-forming chamber ( 32 ); gas inlets ( 47 ) for introducing at least gas into the film-forming chamber ( 32 ); exhaust pumps ( 43 ) for evacuating the film-forming chamber ( 32 ); a cryotrap for controlling the exhaust velocity of water independent of the exhaust pumps ( 43 ); and a temperature controller for controlling the cooling temperature of the cryotrap. The exhaust velocity of the water is controlled by the cooling temperature of the cryotrap so as to form a protective layer susceptible to the partial pressure of water always under the same conditions. This results in a protective layer having resistance to sputtering and excellent secondary emission characteristics.

TECHNICAL FIELD

The present invention relates to a method and apparatus formanufacturing a protective layer which is disposed on a substrate. Theinvention more particularly relates to a method and apparatus formanufacturing a good-quality protective layer which can be suitably usedto coat a dielectric layer in a plasma display panel.

BACKGROUND ART

A plasma display panel (hereinafter, PDP) includes a front panel and aback panel oppositely disposed to each other and sealed at theirperiphery with a sealing member. The front panel and the back panel havea discharge space therebetween filled with a discharge gas includingneon (Ne) and xenon (Xe).

The front panel includes a glass substrate; display electrode pairs; adielectric layer; and a protective layer. The display electrode pairseach consist of a scan electrode and a sustain electrode formed in astripe pattern on the glass substrate. The dielectric layer coats thedisplay electrode pairs, and the protective layer coats the dielectriclayer. Each of the display electrode pair consists of a transparentelectrode and a metal bus electrode formed thereon.

On the other hand, the back panel includes a glass substrate; addresselectrodes; an base dielectric layer; barrier ribs; and phosphor layersof red, green, and blue. The address electrodes are formed in a stripepattern on the glass substrate. The base dielectric layer coats theaddress electrodes. The barrier ribs are formed in a strip pattern onthe base dielectric layer so as to partition the discharge space incorrespondence with the address electrodes. The phosphor layers areformed on the base dielectric layer between the barrier ribs and also onside surfaces of the barrier ribs.

The front panel and the back panel are oppositely disposed to each otherso that the display electrode pairs and the address electrodes can be atright angles to each other and have discharge cells at theirintersections. The discharge cells are arranged in a matrix where threeadjacent discharge cells having red, green, and blue phosphor layersarranged in the direction of the display electrode pairs form a pixelfor color display. In a PDP, a predetermined voltage is applied betweenthe scan electrodes and the address electrodes and between the scanelectrodes and the sustain electrodes so as to generate a gas discharge.The gas discharge generates ultraviolet light which excites the phosphorlayers, allowing them to emit light so as to display color images.

In a PDP thus structured, the protective layer is required to have ahigh resistance to sputtering and a large secondary electron emissioncoefficient. For this reason, a protective layer of magnesium oxide(MgO) is widely used. The sputtering resistance and secondary emissioncharacteristics can protect the dielectric layer from sputtering andreduce the discharge voltage.

The protective layer, which can be formed by electron beam deposition orusing a plasma gun, can have very different film properties depending onthe method and conditions of its formation. Japanese Patent UnexaminedPublication No. 2005-50804 shows an example of stably manufacturing aprotective layer having excellent film properties in the followingmanner. When the protective layer is formed by electron beam depositionof magnesium oxide (MgO), the partial pressures of various gasesincluding oxygen present in the evaporation chamber are controlled in acertain range.

The protective layer of magnesium oxide (MgO) can significantly changefilm properties due to oxygen deficiency or impurity incorporationduring its formation. In a widely used film-forming apparatus ofsubstrate transfer type, a glass substrate finished up to the dielectriclayer is placed on a tray and applied with the protective layer in afilm-forming chamber. When the glass substrate passes through thefilm-forming chamber, the magnesium oxide (MgO) film pieces can adhereto the tray and the mask. When the glass substrate is taken out into theatmosphere from the film-forming chamber, the magnesium oxide (MgO)adhering to the tray and the mask absorbs moisture in the atmosphere.When another magnesium oxide (MgO) film is formed on the next glasssubstrate that is being transferred into the film-forming chamber usingthe same tray and mask, the moisture absorbed in the tray and the maskis released into the film-forming chamber. Part of the moisture isdissociated into hydrogen and oxygen in the film-forming chamber. Thesegases cause a change in the partial pressures in the film-formingchamber, thereby causing variations in the film properties of themagnesium oxide (MgO) film.

As a way to stabilize the partial pressures so as to reduce the amountof water brought into the film-forming chamber, in a film-formingapparatus of substrate transfer type, different trays and differentmasks are used inside and outside the film-forming chamber. However, asthe substrate size becomes larger and more diverse, the transfermechanism becomes more complicated. As a result, the apparatus has alower reliability and a higher cost.

As another way to stabilize the partial pressures so as to reduce theamount of water brought into the film-forming chamber, the atmosphereduring the transfer of the substrate is made low in dew point and watercontent. This method requires a plurality of pumps such as cryopumps orturbomolecular pumps having a high exhausting capacity. In addition, itis necessary to vary the exhaust velocity by changing the opening of aconductance valve disposed between the film-forming chamber and thepumps or the number of the pumps. The problem is that this approachcauses variation in the exhaust velocity not only of the water but alsoof the other gases, making it difficult to keep the partial pressures inthe film-forming chamber constant. On the other hand, in the case wherethe exhaust velocity is varied by changing the speed of theturbomolecular pumps, a change in the compression ratio causes a changein the component ratio of the exhaust gas, making it impossible tocontrol the partial pressure of water independently.

SUMMARY OF THE INVENTION

In a method for manufacturing a protective layer according to thepresent invention, when the protective layer is formed in a film-formingchamber, the partial pressure of water in the film-forming chamber iscontrolled by the exhaust velocity of the water in the film-formingchamber, with the total pressure in the film-forming chamber keptconstant.

This method allows the protective layer, which is susceptible to thepartial pressure of water to be always formed under the same conditions.As a result, the protective layer having excellent properties can beformed in a stable manner without being influenced by outside humidity,the moisture adhering to a substrate jig, or the like.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a configuration of an ACsurface-discharge type PDP.

FIG. 2A is a sectional side view showing a configuration of an apparatusfor manufacturing a protective layer according to an embodiment of thepresent invention.

FIG. 2B is a plan view showing a structure of a film-forming chamber ofthe apparatus for manufacturing a protective layer according to theembodiment of the present invention.

FIG. 3 is a diagram showing a structure of an exhaust pump to dischargewater used in the apparatus for manufacturing a protective layeraccording to the embodiment of the present invention.

FIG. 4 is a graph showing the relation between the cooling temperatureof a cryotrap and the ionic strength of water in the apparatus formanufacturing a protective layer according to the embodiment of thepresent invention.

FIG. 5 is a graph showing the relation between the cooling temperatureof the cryotrap and the ionic strengths of hydrogen and oxygen in theapparatus for manufacturing a protective layer according to theembodiment of the present invention.

REFERENCE MARKS IN THE DRAWINGS

-   11 front glass substrate-   12 display electrode pair-   12 a scan electrode-   12 b sustain electrode-   13 dielectric layer-   14 protective layer-   16 back glass substrate-   17 address electrode-   18 base dielectric layer-   19 barrier rib-   20 phosphor layer-   21 discharge space-   30 substrate receiving chamber-   31 substrate preheating chamber-   32 film-forming chamber-   33 substrate cooling chamber-   34 substrate removing chamber-   40 evaporation material-   41 evaporation hearth-   42 electron gun-   43 exhaust pump (first exhaust part)-   44 electron beam-   45 impingement point-   46 shutter-   47 gas inlet-   48 tray-   49 gas analyzer-   51 cryotrap-   52 turbomolecular pump-   53 freezer-   54 thermocouple-   100 front panel-   200 back panel

DETAILED DESCRIPTION OF PREFERRED EMBODIMENT

A method and apparatus for manufacturing a protective layer according toan embodiment of the present invention is described as follows withreference to drawings.

Exemplary Embodiment

The protective layer manufactured using the method and apparatus formanufacturing a protective layer according to the present invention isuseful to protect the dielectric layer of a PDP. Therefore, first, a PDPin which the protective layer is used is described as follows.

FIG. 1 is a perspective view showing a configuration of an ACsurface-discharge type PDP. In the PDP, front panel 100 includes frontglass substrate 11; display electrode pairs 12; dielectric layer 13; andprotective layer 14. Display electrode pairs 12 consist of N scanelectrodes 12 a and N sustain electrodes 12 b which are formed on a mainsurface of front glass substrate 11. Dielectric layer 13 coats displayelectrode pairs 12. Protective layer 14 made of a magnesium oxide (MgO)thin film coats dielectric layer 13. Scan electrodes 12 a and sustainelectrodes 12 b each consists of a transparent electrode and a metal buselectrode laminated thereon.

Back panel 200 includes back glass substrate 16; M address electrodes17; base dielectric layer 18; barrier ribs 19; and phosphor layers 20. Maddress electrodes 17 are formed on a main surface of back glasssubstrate 16. Base dielectric layer 18 coats address electrodes 17.Barrier ribs 19 are formed between address electrodes 17 on basedielectric layer 18. Phosphor layers 20 are applied between barrier ribs19.

Front panel 100 and back panel 200 are oppositely disposed to each otherso as to make display electrode pairs 12 and address electrodes 17 atright angles to each other with barrier ribs 19 therebetween. The imagedisplay region is sealed at its periphery with a sealing member. Frontpanel 100 and back panel 200 have discharge space 21 therebetween filledwith a discharge gas such as a mixture of neon (Ne) and xenon (Xe) at apressure of 45 to 80 kPa. The intersections of display electrode pairs12 and address electrodes 17 function as discharge cells.

The following is a description of the manufacture of protective layer 14of front panel 100 using the method and apparatus for manufacturing aprotective layer according to the embodiment of the present invention.FIG. 2A is a sectional side view showing a configuration of theapparatus for manufacturing a protective layer according to theembodiment, and FIG. 2B is a plan view of a film-forming chamber of theapparatus.

The apparatus for manufacturing a protective layer shown in FIGS. 2A and2B is an electron-beam evaporation apparatus of substrate transfer typefor forming a magnesium oxide (MgO) film. As shown in FIG. 2A, theevaporation apparatus includes substrate receiving chamber 30, substratepreheating chamber 31, film-forming chamber 32, substrate coolingchamber 33, and substrate removing chamber 34. First, front panel 100 ofthe PDP that is finished up to dielectric layer 13 is placed on tray 48and transferred into substrate receiving chamber 30. Front panel 100 isthen transferred into substrate preheating chamber 31 to be preheated,and transferred into film-forming chamber 32 in which a magnesium oxide(MgO) film as the protective layer is formed on dielectric layer 13 offront panel 100.

Film-forming chamber 32 includes evaporation hearths 41 each withevaporation material 40 inside and electron guns 42, and is connected toa plurality of exhaust pumps 43 which are a first exhaust part toevacuate the chamber to high vacuum. Also, substrate preheating chamber31 and substrate cooling chamber 33 each include exhaust pumps(unillustrated) to depressurize these chambers. Film-forming chamber 32further includes gas analyzer 49 such as a quadrupole mass analyzer(QMS), which is a partial pressure measuring part to measure the partialpressures of various gases during the film formation. Film-formingchamber 32 further includes gas inlets 47, which are a gas inlet part tointroduce at least oxygen thereinto.

In film-forming chamber 32, exhaust pumps 43 as the first exhaust partbring film-forming chamber 32 to high vacuum, and the electron beamsemitted from electron guns 42 heat evaporation materials 40. Theresulting vapor is deposited on front glass substrate 11 so as to form amagnesium oxide (MgO) film. Film-forming chamber 32 is provided withshutters 46 below front glass substrate 11 so as to control the scope ofthe vapor to front glass substrate 11.

As shown in FIG. 2B, electron guns 42 and exhaust pumps 43 are disposedon side surfaces of film-forming chamber 32. Alternatively, in view ofthe structure of the apparatus, exhaust pumps 43 may be disposed on theside surface opposite to the side surface having electron guns 42thereon. In the case of an apparatus for manufacturing a large-size PDP,as shown in FIG. 2B, film-forming chamber 32 includes a plurality ofexhaust pumps 43 as the first exhaust part to evacuate film-formingchamber 32 to high vacuum in addition to a plurality of evaporationhearths 41 and electron guns 42.

FIG. 3 is a diagram showing a structure of an exhaust pump as a secondexhaust part to control the exhaust velocity of water used in theapparatus according to the embodiment of the present invention. Thesecond exhaust part consists of cryotrap 51 and turbomolecular pump 52.The upstream side of cryotrap 51 is connected to film-forming chamber 32so as to evacuate film-forming chamber 32 in the direction of arrow “B”.Cryotrap 51 is cooled by freezer 53 and temperature-controlled bytemperature controller 54. Cryotrap 51 selectively exhausts water, andthe cooling temperature of the cryopanel controls the exhaust velocityof the water. The cryopanel of cryotrap 51 is cooled with liquid heliumand normally used at not more than 20 K. Cryotrap 51 is characterized bya high exhaust velocity for hydrogen and water and by a constant exhaustvelocity for other gases in the temperature range where cryotrap 51 canbe used.

Next, the process of forming a magnesium oxide (MgO) film as protectivelayer 14 of the PDP is described as follows. First, front panel 100 thatis finished up to dielectric layer 13 is placed on tray 48 andtransferred into substrate receiving chamber 30. Front panel 100 is thentransferred into substrate preheating chamber 31 and heated there by aheater while being evacuated to vacuum. Then, front panel 100 istransferred into film-forming chamber 32 in the direction of arrow “A”.In film-forming chamber 32, while front panel 100 is being transferredat a constant speed, protective layer 14 is formed on dielectric layer13. When the formation of protective layer 14 is over, front panel 100is transferred with tray 48 into substrate cooling chamber 33, cooled toa predetermined temperature under vacuum, and then transferred intosubstrate removing chamber 34 so as to be removed there, therebycompleting the series of operations.

In film-forming chamber 32, electron beams 44 emitted from electron guns42 are deflected and focused onto a plurality of impingment points 45 soas to be irradiated to evaporation materials 40 of MgO particleaggregates on evaporation hearths 41. As a result, evaporation materials40 are heated and evaporated so as to deposit a magnesium oxide (MgO)film as protective layer 14 on dielectric layer 13 of front panel 100traveling above it. Evaporation hearths 41 slowly rotate so thatevaporation materials 40 can be evenly heated by electron beams 44,thereby preventing the local evaporation of the material.

The magnesium oxide (MgO) film as protective layer 14 thus formedchanges physical properties due to oxygen deficiency or impurityincorporation during its formation. The physical properties have beenfound to be susceptible to water in film-forming chamber 32 and tohydrogen dissociated from the water. For example, when the magnesiumoxide (MgO) film has an oxygen deficiency or impurities such as H, OH,or C incorporated therein, it disrupts the bonds between Mg atoms and Oatoms on the magnesium oxide (MgO) film surface. This results in adangling bond not involved in the bonds, thereby degrading the secondaryemission characteristics. The degradation of the secondary emissioncharacteristics increases a starting voltage and variations in theelectron emission characteristics in the plane of the PDP panel, therebycausing variations in display or display defects in the plane of the PDPpanel. Such a display quality of PDPs that is susceptible to changes infilm properties is a serious issue as well as an increase in screen sizeand an improvement in definition of PDPs.

The water that greatly affects the properties of the MgO film seems tobe the water absorbed in the magnesium oxide (MgO) film pieces adheringto tray 48 transferred into film-forming chamber 32 together with frontpanel 100. In order to reduce the water, different trays 48 are usedbetween atmosphere and vacuum as described earlier, or tray 48 is madeto pass through an atmosphere in a dry environment with a low a dewpoint. However, these measures are not enough to completely prevent thewater from being brought into film-forming chamber 32.

In the embodiment of the present invention, film-forming chamber 32 usesturbomolecular pumps as main exhaust pumps 43. As shown in FIG. 3, eachturbomolecular pump 52 is used in combination with cryotrap 51 connectedthereto so as to control the exhaust velocity of water only. The coolingtemperature of cryotrap 51 is controlled by placing the cooling capacityof freezer 53 for cooling cryotrap 51 and the temperature of thecryopanel under control of a signal from temperature controller 54.Controlling the cooling temperature of cryotrap 51 in this manner allowsthe exhaust velocity of the water to be controlled independently,thereby keeping the partial pressure of the water in a certain range.

FIG. 4 shows the results of the control of the exhaust velocity of waterby actually controlling the cooling temperature of cryotrap 51. In FIG.4, the vertical axis represents the ion current of water which ismeasured by the quadrupole mass analyzer (QMS) and corresponds to thepartial pressure of the water. The results shown in FIG. 4 indicate thatthe exhaust velocity of the water can be controlled by the coolingtemperature of cryotrap 51. The partial pressure of the water infilm-forming chamber 32 is controllable when the cooling temperature ofcryotrap 51 is in the range of 170 K to 210 K.

On the other hand, FIG. 5 is a graph plotting the ion currents ofhydrogen and oxygen with respect to the cooling temperature of cryotrap51. The graph indicates that the ion currents change similarly to theion current of the water in film-forming chamber 32 shown in FIG. 4.This means that the hydrogen and oxygen are those dissociated from thewater in film-forming chamber 32. As a result, it turns out that thepartial pressures of the oxygen and the hydrogen in film-forming chamber32 can be controlled independently by the cooling temperature ofcryotrap 51. Note that it has been confirmed that gases other thanhydrogen and water do not depend on the temperature of cryotrap 51 andtherefore their exhaust velocity does not change.

Consequently, this method allows the partial pressure of water duringthe film formation to be in a certain range.

The gases in film-forming chamber 32 are analyzed by gas analyzer 49.The ratio of the partial pressure of hydrogen to the partial pressure ofoxygen can be kept constant by changing the cooling temperature ofcryotrap 51 with the total pressure kept constant. For example, thecooling temperature of cryotrap 51 can be set to a relatively hightemperature at first and then lowered with an increase in the amount ofwater brought into film-forming chamber 32 by the magnesium oxide (MgO)film pieces adhering to tray 48 or the like. This allows the partialpressure of the water in film-forming chamber 32 to be kept in a certainrange with the total pressure kept constant. A typical cryotrap 51 doesnot have a function of performing high-precision temperature control.For this reason, cryotrap 51 used in the present invention is providedon its surface with at least one thermocouple as temperature controller54. Cryotrap 51 controls the performance of freezer 53 while monitoringthe temperature measured by the thermocouple.

The following method is sometimes used to keep the ratio of the partialpressure of hydrogen to the partial pressure of oxygen in film-formingchamber 32 in a certain range. During the film formation, oxygen isintroduced into film-forming chamber 32 from gas inlets 47 as a gasinlet part so as to control the internal atmosphere. This is donebecause of the following reason. When the partial pressure of waterincreases, even if the introduction amount of oxygen is changed whilevarying the exhaust velocity by changing the opening of the valve or byother methods, it is difficult to keep the ratio of the partialpressures of hydrogen to oxygen in a certain range. This is due to thedifference in the exhaust velocity of various gases.

However, as described above, according to the embodiment of the presentinvention, the partial pressures of water, oxygen, and hydrogen can bekept in a certain range by the following method, with the total pressurein film-forming chamber 32 kept constant. The principle of the method isto control the following three parameters based on the partial pressureinformation detected by the quadrupole mass analyzer (QMS) of gasanalyzer 49. The three parameters are the introduction amount of oxygenfrom gas inlets 47; the amount of exhaust from exhaust pumps 43; and theamount of exhaust of cryotrap 51 which discharges water independent ofexhaust pumps 43.

The configuration of the apparatus for manufacturing a protective layeris not limited to the one described above. For example, it is possibleto dispose more than one substrate preheating chamber 31 betweensubstrate receiving chamber 30 and film-forming chamber 32 depending onthe setting conditions for the temperature profiles. It is also possibleto dispose more than one substrate cooling chamber 33 betweenfilm-forming chamber 32 and substrate removing chamber 34. The formationof the magnesium oxide (MgO) film in film-forming chamber 32 can beperformed with the front panel 100 either still or moving.

The numbers of evaporation hearths 41, electron guns 42, and exhaustpumps 43 placed in film-forming chamber 32 are dependent on the transferspeed of the substrate and the size of front panel 100, and thereforecan be different from the numbers shown in FIGS. 2A and 2B.

In the aforementioned description, protective layer 14 is formed bydepositing a magnesium oxide (MgO) film.

Alternatively, besides magnesium oxide (MgO), other metal oxides such asa calcium oxide (CaO) or a strontium oxide (SrO) can be used to obtainthe same advantages of the present invention.

INDUSTRIAL APPLICABILITY

The method and apparatus according to the present invention allows aprotective layer or the like to be formed with the partial pressure ofwater kept constant and always under the same conditions. Therefore, thepresent invention is useful as a method and apparatus for manufacturingnot only a protective layer for PDPs but also an electronic component ora display device.

1. A method for manufacturing a protective layer, wherein when theprotective layer is formed in a film-forming chamber, a partial pressureof water in the film-forming chamber is controlled by an exhaustvelocity of the water in the film-forming chamber, with a total pressurein the film-forming chamber kept constant.
 2. The method formanufacturing a protective layer of claim 1, wherein the partialpressure of the water in the film-forming chamber is controlled whileintroducing at least oxygen into the film-forming chamber, therebycontrolling a ratio of a partial pressure of hydrogen to a partialpressure of oxygen in the film-forming chamber.
 3. The method formanufacturing a protective layer of claim 1, wherein the protectivelayer is made of a magnesium oxide film.
 4. An apparatus formanufacturing a protective layer comprising: a film-forming chamber; agas inlet part for introducing gas into the film-forming chamber; afirst exhaust part for evacuating the film-forming chamber; and a secondexhaust part for controlling an exhaust velocity of water independent ofthe first exhaust part.
 5. The apparatus for manufacturing a protectivelayer of claim 4, wherein the second exhaust part includes a cryotrap,the second exhaust part controlling the exhaust velocity of the water bya cooling temperature of the cryotrap.
 6. The apparatus formanufacturing a protective layer of claim 4, further comprising: apartial pressure measuring part for measuring a partial pressure ofoxygen and a partial pressure of hydrogen in the film-forming chamber,wherein the exhaust velocity of the water by the second exhaust partcontrols a ratio of the partial pressure of the oxygen to the partialpressure of the hydrogen.
 7. The apparatus for manufacturing aprotective layer of claim 5, wherein the cooling temperature of thecryotrap is controlled in a range of 170 K to 210 K.
 8. The method formanufacturing a protective layer of claim 2, wherein the protectivelayer is made of a magnesium oxide film.